Thesis
Title A novel AlGaN/GaN based enhancement-mode high electron mobility transistor with sub-critical barrier thickness / by Raphael Brown.
Author Brown, Raphael, author.
Production 2015.


Status Loan Type Location Shelf-mark
 Reference Only  Not for loan  Library Research Annexe  Thesis TA3375  

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Description xvii, 132 pages : illustrations (chiefly colour) ; 30 cm
Note Ph.D. thesis submitted to the School of Engineering, University of Glasgow, 2015.
Thesis Thesis (Ph.D.) -- University of Glasgow, 2015.
Bibliography Includes bibliographical references (pages 115-132).
Note Electronic version also available via Enlighten: Theses, http://theses.gla.ac.uk/.
Library Class Thesis TA3375
Subject Very high speed integrated circuits -- Theses PhD.
Field-effect transistors -- Theses PhD.
Gallium nitride -- Theses PhD.
Metal oxide semiconductors -- Theses PhD.
Semiconductors -- Theses PhD.

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