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Theses (University of Glasgow)
Title
A novel AlGaN/GaN based enhancement-mode high electron mobility transistor with sub-critical barrier thickness / by Raphael Brown.
Author
Brown, Raphael, author.
Production
2015.
Status
Loan Type
Location
Shelf-mark
Reference Only
Not for loan
Library Research Annexe
Thesis TA3375
More Details
Description
xvii, 132 pages : illustrations (chiefly colour) ; 30 cm
Note
Ph.D. thesis submitted to the School of Engineering, University of Glasgow, 2015.
Thesis
Thesis (Ph.D.) -- University of Glasgow, 2015.
Bibliography
Includes bibliographical references (pages 115-132).
Note
Electronic version also available via Enlighten: Theses, http://theses.gla.ac.uk/.
Library Class
Thesis TA3375
Subject
Very high speed integrated circuits -- Theses PhD.
Field-effect transistors -- Theses PhD.
Gallium nitride -- Theses PhD.
Metal oxide semiconductors -- Theses PhD.
Semiconductors -- Theses PhD.
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