Thesis
Title Design and fabrication of A1GaN/GaN HEMTs with high breakdown voltages / by Douglas James Macfarlane.
Author Macfarlane, Douglas James.
Published 2014.

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 Reference Only  Not for loan  Library Research Annexe  Thesis TA2522  
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Description xxv, 157 p. : ill. ; 30 cm.
Note Ph.D. thesis submitted to Electronics and Nanoscale Engineering, School of Engineering, College of Science and Engineering, University of Glasgow, 2014.
Thesis Thesis (Ph.D.) -- University of Glasgow, 2014.
Bibliography Includes bibliographical references (p. 143-157)
Note Electronic version also available via Enlighten: Theses, http://theses.gla.ac.uk
Library Class Thesis TA2522
Subject Gallium nitride -- Theses PhD.
Field effect transistors -- Theses PhD.
High electron mobility transistors -- Theses PhD.
Modulation-doped field-effect transistors -- Theses PhD.

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