Thesis
Title Current collapse and device degradation in AlGaN/GaN heterostructure field effect transistors / Daniel Balaz.
Author Balaz, Daniel.
Published 2010.

Status Loan Type Location Shelf-mark
 Reference Only  Not for loan  Library Research Annexe  Thesis TA1297  
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Description xxxi, 157 p. : ill. ; 30 cm.
Note Ph.D. thesis submitted to the School of Engineering, College of Science and Engineering, University of Glasgow, 2010.
Thesis Thesis (Ph.D.) -- University of Glasgow, 2010.
Bibliography Includes bibliographical references (p. 146-157)
Note Electronic version also available via Enlighten: Theses, http://theses.gla.ac.uk
Library Class Thesis TA1297
Subject Field-effect transistors -- Theses PhD.
Piezoelectricity -- Theses PhD.
Gallium nitride -- Theses PhD.
Electronic apparatus and appliances -- Reliability -- Theses PhD.

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